Ecological process for depositing thin layers with high tribology resistance for reconditioning the hydraulic turbines
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Atomic layer deposition process with TiF4 as a precursor for depositing metal fluoride thin films.
A novel atomic layer deposition process for the preparation of fluoride thin films in a temperature range of 225 degrees C-400 degrees C is introduced. The crystallinity, morphology, composition, thicknesses, refractive indices, and transmittance of the films are analyzed. Low impurity levels are obtained at 350 degrees C-400 degrees C with good stoichiometry. Refractive indices of 1.34-1.42 fo...
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ژورنال
عنوان ژورنال: IOP Conference Series: Materials Science and Engineering
سال: 2020
ISSN: 1757-899X
DOI: 10.1088/1757-899x/997/1/012032